2005. 12. 1 1/3 semiconductor technical data USFB13L schottky barrier type diode revision no : 2 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. reversed battery connection protection. dc/dc converter. cellular phones. maximum rating (ta=25 ) usf a 21 1. anode 2. cathode b cc dim millimeters a b c d d e e e f f g h g h i i j j cathode mark 0.91 0.05 + _ 0.61 0.05 + _ 2.5 0.1 + _ 1.9 0.1 + _ 1.3 0.1 + _ 0.46 0.1 + _ 1.2 0.1 + _ 0.11 0.05 + _ 0.6 0.1 + _ 0.8 0.1 + _ electrical characteristics (ta=25 ) cathode mark type name marking bb lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm (1) i fm =0.1a - 0.25 - v v fm (2) i fm =0.7a - 0.33 0.37 v fm (3) i fm =1.0a - 0.39 - repetitive peak reverse current i rrm (1) v rrm =5v - 50 - a i rrm (2) v rrm =30v - 0.5 1 ma junction capacitance c j v r =10v, f=1.0mhz - 40 - pf characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 30 v average output rectified current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 22 a power dissipation p d * 667 mw junction temperature t j -40 125 storage temperature range t stg -40 125 * mounted on a glass epoxy board (soldering land : 6mm 6mm)
2005. 12. 1 2/3 USFB13L revision no : 2 0 0.2 0.4 0.6 1.0 0.8 10 0.01 0.03 0.3 0.1 1 3 t =125 c 25 c 75 c j i - v ff f instantaneous forward voltage v (v) f instantaneous forward current i (a) number of cycles peak surge forward current i (a) 1 0 8 4 16 12 28 24 20 fsm max 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p - i f(av) f(av) f(av) average forward current i (a) 0 0 0.1 0.2 0.3 0.4 0.5 f(av) average forward power dissipation p (w) 0.2 0.6 0.4 0.8 1.0 1.2 1.6 1.4 rectangular rectangular waveform conduction angle =60 conduction angle 0 360 ta - i f(av) max f(av) average forward current i (a) 0 0 20 40 100 80 60 120 140 maximum allowable ambient temperature ta ( c) 0.2 0.4 0.6 1.0 1.2 0.8 1.4 1.6 device mounted on a ceramic board (board size : 50mm x 50mm) waveform 0 i f(av) v =15v r 360 =180 dc 120 180 dc 0255075 150 125 100 0.01 0.1 1 10 100 i r - t j junction temperature tj ( ) reverse current i r (ma) reverse voltage v r (v) junction capacitance c j (pf) c j - v r 100 110 1000 100 10 f =1mhz v r = 30v 20v 15v 5v 3v 10v c
2005. 12. 1 3/3 USFB13L revision no : 2 t j =125 c 1000 10 10000 100 1 0.001 0.01 0.1 1 10 100 1000 2.0 1.0 2.5 1.5 0.0 0.5 01020 30 p r (av) -v r revers voltage v r (v) reverse current i r (ma) r th (j-a) - t time t (s) transient thermal impedance rth (j-a) ( /w) c 0 a 360 conduction angle : a rectangular wave form 60 120 180 240 300 dc (1) device mounted on a ceramic board soldering land: 2.0 mm x2.0mm (2) device mounted on glass-epoxy board soldering land: 6.0 mm x6.0mm (3) device mounted on glass-epoxy board standard soldering pad (1) (2) (3)
|
